| 摘要 |
<p>Dopant activation in heavily boron doped p+-Si is achieved by applying electric current of high density. The p+-Si was implanted by a 40 KeV BF2+ at an ion intensity 5x1015 ions per cm2 and annealed at 900 °C for 30 minutes to obtain a partial boron activation according to conventional processing steps. To obtain additional activation and higher conductivity, current was gradually applied according to the invention to a current density of approximately 5x106 A/cm2 was realized. The resistance of the p+-Si gradually increases and then decreases with a precipitous drop at a threshold current. The resistance was reduced by factor of 5 to 18 times and was irreversible if an activation current threshold was reached or exceeded. The high-current-density-dopant activation occurs at room temperature.</p> |
