| 摘要 |
<p>In a method for producing a channel region layer (3) in a Sic-layer (2) for producing a voltage controlled semiconductor device n-type dopants and p-type dopants are implanted into a surface-near layer (5) of the SiC layer. The p-type dopants implanted have a higher diffusion rate in SiC than the n-type dopants implanted. The SiC-layer is then heated at such a temperature that p-type dopants implanted diffuse from said surface-near layer into the surrounding regions of the SiC-layer being lightly n-doped to such a degree that a channel region layer in which p-type dopants dominates is created.</p> |
