SiC SEMICONDUCTOR DEVICE COMPRISING A pn JUNCTION WITH A VOLTAGE ABSORBING EDGE

摘要

A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.