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经营范围
发明名称
Lateraler MOSFET und Verfahren zur Herstellung
摘要
申请公布号
DE69128406(D1)
申请公布日期
1998.01.22
申请号
DE19916028406
申请日期
1991.10.16
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
SHIRAI, KOJI, C/O INTELLECTUAL PROPERTY DIVISION, MINATO-KU, TOKYO 105, JP
分类号
H01L29/78;H01L21/336;H01L29/10;H01L29/423;(IPC1-7):H01L29/10;H01L27/06
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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