发明名称 |
Self-aligned metal wiring manufacture for semiconductor component |
摘要 |
The metal wiring manufacture uses an insulation film (33) applied to the semiconductor substrate (31), overlaid by a conductor layer (35), a second insulation layer (37) and a photosensitive film (39). The latter is selectively exposed and developed to provide a contact hole structure, with etching of the exposed area to form the contact hole (41), before exposure and development of the remainder of the photosensitive film and etching to provide a recess around the contact hole. The photosensitive layer is removed and the contact hole and the recess are filled with a conductive material in electrical contact with the conductive layer.
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申请公布号 |
DE19723062(A1) |
申请公布日期 |
1998.01.22 |
申请号 |
DE19971023062 |
申请日期 |
1997.06.02 |
申请人 |
LG SEMICON CO., LTD., CHEONGJU, KR |
发明人 |
JUN, YOUNG-KWON, SEOUL/SOUL, KR |
分类号 |
H01L21/28;H01L21/768;(IPC1-7):H01L21/768;H01L21/60 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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