发明名称 Self-aligned metal wiring manufacture for semiconductor component
摘要 The metal wiring manufacture uses an insulation film (33) applied to the semiconductor substrate (31), overlaid by a conductor layer (35), a second insulation layer (37) and a photosensitive film (39). The latter is selectively exposed and developed to provide a contact hole structure, with etching of the exposed area to form the contact hole (41), before exposure and development of the remainder of the photosensitive film and etching to provide a recess around the contact hole. The photosensitive layer is removed and the contact hole and the recess are filled with a conductive material in electrical contact with the conductive layer.
申请公布号 DE19723062(A1) 申请公布日期 1998.01.22
申请号 DE19971023062 申请日期 1997.06.02
申请人 LG SEMICON CO., LTD., CHEONGJU, KR 发明人 JUN, YOUNG-KWON, SEOUL/SOUL, KR
分类号 H01L21/28;H01L21/768;(IPC1-7):H01L21/768;H01L21/60 主分类号 H01L21/28
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