| 摘要 |
PURPOSE:To prevent disconnection and defective connection by forming the material which forms the surface of a capacity lower electrode, which will eventually become an information storage part, as a part of the material which forms a bit line to be electrically connected to the other diffusion layer of an insulated-gate FET. CONSTITUTION:A capacity lower electrode 7 is formed by depositing phosphorus- doped polycrystalline silicon and then by patterning it. At the same time, a polycrystalline silicon layer is patterned to be left over also in a part which connects a bit line 11 and a diffusion layer 5. After that, a capacitive insulating film 8 is formed by oxidation of the surface of the polycrystalline silicon and a capacity upper electrode 9 is formed from polycrystalline silicon. After a silicon oxide film 10 is deposited, a part of the silicon oxide film 10 and capacitive insulating film 8 which connects the bit line 11 and the diffusion layer 5 is removed by etching and then the bit line 11 is formed by depositing tungsten silicide and patterning it. Consequently, disconnection or defective connection is prevented. |
