发明名称 Fuse in a semiconductor integrated circuit
摘要 The fusible link is in the form of a conductor path (4) with a section of reduced cross-section at the fuse point, with a hollow space (H) adjacent at least one surface of the fuse point. Pref. the hollow space is provided in the layers (2,3) applied to the surface of the semiconductor substrate (1) on either side of the conductor path and is covered by a cover layer (6), e.g. a BPSG layer.
申请公布号 EP0783182(A3) 申请公布日期 1998.01.21
申请号 EP19970100075 申请日期 1997.01.03
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 WERNER, WOLFGANG, DR.-ING.;MUELLER, KARLHEINZ, ING.;POEHLE, HOLGER, DIPL.-ING.
分类号 H01L21/82;H01L23/525;H01L23/58 主分类号 H01L21/82
代理机构 代理人
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