Semiconductor antifuse structure and method.

摘要

A method for forming an array of antifuse structures on a semiconductor substrate which previously has had CMOS devices fabricated thereupon up to first metallization. A fuse structure is formed as a sandwich by successively depositing a bottom layer of TiW (16), a layer of amorphous silicon (18), and a top layer of TiW (20). The amorphous silicon is formed in an antifuse via formed in a dielectric layer (17) covering the bottom layer of TiW (16). First metallization (22) is deposited and patterned over the top layer of TiW. An intermetal dielectric layer is formed over the fuse array and second metal conductors are formed thereupon. An alternative embodiment includes forming an oxide sidewall spacer around the periphery of an anti fuse structure. Connection resistance to the bottom layer of TiW is lowered by using a number of vias between the second--metal conductors and the bottom layer of TiW in a row of an array of antifuse devices.