发明名称 CRUSHING METHOD OF POLYCRYSTALLINE SILICON
摘要 PROBLEM TO BE SOLVED: To attain efficient mass production of lumpy polycrystalline silicon with a simple equipment by heating a cylindrical polycrystalline silicon at a specific temp., thereafter rapidly cooling and crushing with a press. SOLUTION: Then the cylindrical polycrystalline silicon (a silicon rod) obtained by a gas phase reaction, e.g. a 100mm diameter and 80mm length sized rod, is crushed, at first the silicon rod 10 is heated at 400-800 deg.C, and the silicon rod 10 taken out from a heat treating equipment is charged into a water bath to rapidly cool it under 100 deg.C. With this process, a lot of fine cracks are generated in the silicon rod 10 and then the silicon rod 10 is crushed with the press. The press is provided with a stationary board 2 erected on a side edge part of one side of a receiving base 1, and a pressure plate 3 driven back and forth in the direction vertical to the surface of the stationary board 2 on the receiving base 1, and the silicon rod 10 is crushed in a lumpy form by allowing the pressure plate 3 to approach the fixing plate 2.
申请公布号 JPH1015422(A) 申请公布日期 1998.01.20
申请号 JP19960193860 申请日期 1996.07.03
申请人 SUMITOMO SITIX CORP 发明人 OMURE AKIO;MORIZAKI KATSUYA
分类号 B02C19/00;B02C19/18;(IPC1-7):B02C19/18;B02C19/12 主分类号 B02C19/00
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