发明名称 Photomultiplier having a photocathode comprised of semiconductor material
摘要 A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
申请公布号 US5710435(A) 申请公布日期 1998.01.20
申请号 US19950580057 申请日期 1995.12.20
申请人 HAMAMATSU PHOTONICS K.K. 发明人 NIIGAKI, MINORU;HIROHATA, TORU;SUZUKI, TOMOKO;YAMADA, MASAMI
分类号 H01J1/34;H01J43/08;(IPC1-7):H01L29/06;H01L29/12 主分类号 H01J1/34
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