发明名称 |
Merged device with aligned trench fet and buried emitter patterns |
摘要 |
A merged power device structure, of the emitter-switching type, in which the emitter of the bipolar power transistor has a minimum-width pattern which is aligned to the trenches of a trench control transistor. Thus the current density of the bipolar is maximized, since the emitter edge length per unit area is increased. The parasitic base resistance of the bipolar can also be reduced.
|
申请公布号 |
US5710443(A) |
申请公布日期 |
1998.01.20 |
申请号 |
US19950472337 |
申请日期 |
1995.06.07 |
申请人 |
SGS-THOMPSON MICROELECTRONICS, INC. |
发明人 |
BLANCHARD, RICHARD A. |
分类号 |
H01L21/8222;H01L21/8248;H01L27/06;H01L27/07;H01L27/088;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L29/744;H01L29/749 |
主分类号 |
H01L21/8222 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|