Field emission device with micromesh collimator

摘要

A structure is described in which subpixel-sized electron beams are formed by extraction from field emission microtips located on cathode columns over which orthogonally disposed gate lines have been laid. After accelerating past openings in said gate lines, all electrons originating from the same subpixel are made to pass through a single micromesh whose electric potential is more negative than that of the gate. This results in said electrons becoming collimated and forming a parallel beam which diverges only slightly before it reaches the phosphor screen (anode). A process for manufacturing this structure is also described. Said process does not require that the microtips and the micromesh be carefully aligned nor does the presence of the micromesh lead to any reduction in optical resolution. The problem of minimizing stress in the micromesh is also addressed.