| 摘要 |
Disclosed herein is a glass composition having a dielectric constant for high-frequency circuits which comprises SiO2 and at least one of B2O3 or K2O in a ratio falling within the region enclosed by lines passing through point A (65, 35, 0), point B (65, 20, 15), point C (85, 0, 15), and point D (85, 15, 0) in a composition diagram for the ternary system of SiO2, B2O3 and K2O. The glass composition may have incorporated with a small amount of clarifying so as to lower the melting temperature and glass softening point. As an insulating material, it is particularly suitable for high-frequency circuits in compact and fast electronic machines and equipment.
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