| 摘要 |
FIELD: detection of low flux of radiation and nuclear particles. SUBSTANCE: device has semiconductor substrate which surface is covered with semiconductor regions which conductivity type is opposite to conductivity type of substrate, and gate electrode which is insulated from substrate with buffer layer. Semiconductor regions are insulated from substrate with semiconductor layers which conductance is less than that of semiconductor regions. They provide p-n junction with substrate. Said semiconductor regions are connected to gate electrode through film resistor which is insulated from semiconductor layers by means of buffer layer. Additional semiconductor regions are provided on boundary between semiconductor layers and substrate. Conductivity of additional semiconductor regions is greater than that of substrate. EFFECT: increased functional capabilities. 1 dwg |
