| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a high-definition, compact, and a reliable active matrix panel at a low price by making thin film transistors, constituting a gate line and a source line driver circuit, shorter in gate length than thin film transistors constituting a pixel matrix. SOLUTION: The TFTs constituting the driver circuits are made as short in gate length as possible within the limit that the dielectric strength allows. Then TFTs forming sample holding circuits 17-19 may be lower in dielectric strength than TFTs forming shift registers 13, so they are made shorter in gate length of the TFTs forming the shift registers 13. Consequently, the operating speeds of the driver circuits 12 and 21 are improved and writing and holding operation of each pixel are held in the best state.</p> |
