| 摘要 |
PROBLEM TO BE SOLVED: To adjust a current route to relax the concentration of current by partly laying cells with different on-state resistance in a cell array in a lateral power MOSFET. SOLUTION: In such a structure where lateral power MOSFET cells (LDMOS cell) 102 are regularly arranged in a cell array area and a drain electrode pad 100 and a source electrode pad 101 are positioned on its periphery, cells in a part included in the shortest route between pads in which drain current is concentrated during operation are made to be high-resistance LDMOS cells 102H. These cells may be arranged only adjacent to the corners of respective electrode pads. In addition, low resistance LDMOS cells may be arranged at such a part of low current quantity as outer pherphery of the cell array area. The change in on-state resistance controls a threshold. Such an operation is performed by reducing the source area of cell, changing the number of cells per area and so on. |
