GROWTH METHOD FOR SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR LAMINATION STRUCTURE

摘要

PROBLEM TO BE SOLVED: To reduce and stop the propagation of misfit dislocation in an inclined buffer layer in a structure where the inclined buffer layer intervenes. SOLUTION: The structure is provided with a semiconductor substrate 1, a semiconductor layer 4 whose lattice constant is different from that of the semiconductor substrate 1 and which is formed by epitaxial growth, and an inclined buffer layer 2 provided between the semiconductor substrate 1 and the semiconductor layer 4. The inclined buffer layer 2 is constituted of the plural semiconductor layers whose grid constants can freely be set between the grid constant of the semiconductor substrate 1 and the lattice constant of the semiconductor layer 4. The film thickness of the respective semiconductor layers are more than a critical thickness that can release stress by means of lattice strain. A single quantum well layer 3 constituted of a semiconductor material having the lattice constant different from that of the semiconductor layer of the highest layer is inserted into the semiconductor layer among the plural semiconductor layers constituting the inclined buffer layer 2.