| 摘要 |
PROBLEM TO BE SOLVED: To achieve high-speed reading with low power consumption of a device by combining an input switching means and a selection signal for read control of a semiconductor storage device to make it possible to read stored data without a reference cell. SOLUTION: When stored data is written, a word line WL1 is excited by a line control circuit 6 to turn on a selecting transistor Tr1. In this state, electric potential of a common plate electrode line PL is changed to polarize a ferroelectric capacitor FC1, thereby electric charge with different polarities corresponding with polarization directions are held and stored as binary data in the FC1. During read operation, a line address signal is input to the line control circuit 6 to generate an internal signal of specified width. The internal signal secures discharging time of a bit line, while the signal is generated. Without using a conventional reference cell, no charging and discharging time is required, which enables high-speed operation. And time required for applying reference voltage can be only as long as a sense amplifier SA requires for detecting stored data. |
