| 摘要 |
PROBLEM TO BE SOLVED: To remove an AlGaAs surface oxide layer having a high mixed crystal ratio, using a simple growth process and manufacture a high quality AlGaAs semiconductor multilayer film at with good reproducibility. SOLUTION: A liq. phase epitaxial growth process for growing an AlGaAs multilayer film comprises once exposing a first AlGaAs layer 12 to the air, dissolving off a near-surface portion of the first layer 12, using a raw material soln. in equilibrium to a solid phase of a second AlGaAs layer 14 having a higher Al mixed crystal ratio than that of the first layer 12, and growing the second layer 14, in continuation of using the same raw material soln. |
