| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device exhibiting no deterioration in memory capability and to realize reliability and stability of a dielectric film by applying an electric potential to the dielectric film of a capacitor in the semiconductor memory device so as to reduce charges to be captured in the dielectric film. SOLUTION: Prior to a refresh operation, in order to pre-charge data lines 17a and 17b to 1/2Vcc, a PC signal and an RSL signal are transmitted to circuits 4a and 4b which perform pre-charging. In the circuits 4a and 4b, 1/2Vcc are applied to the data lines 17a and 17b. Then, a timing controller TC operates after an electric potential of the data lines 17 reaches Vss or Vcc by operations of a sense amplifier 2 or after the lapse of a predetermined period of time which has been set by assuming that the potential is amplified to the level close to Vss or Vcc during that period. Thus, a MISFET 26 in an information inverting portion turns off to set the data lines 17a and 17b in an electrically open condition. Information inverted with respect to the information stored in a memory cell is preserved on a data line in a memory cell region and a data line connected to the sense amplifier. |
