| 摘要 |
PROBLEM TO BE SOLVED: To increase areas of the respective layers which are to be subsequently deposited, improve parameters of electric characteristics of an element, and increase integration density of the element, by adopting a rough oxide layer having special both layers wherein oxide is adopted as the bottom layer and the upper layer is formed of TEOS. SOLUTION: Oxide material layer is formed on a silicon base, O3 /TEOS is depositted, structure of a rough oxide layer constituted of both layers is formed, and an island type structure is formed on the surface of the O3 /TEOS. Thereby, when a polycrystalline silicon electrode of a capacitor is depositted on the island type structure of the O3 /TEOS, the electrode is grown along the island type structure of the polycrystalline silicon, and roughness of the surface is improved. Since a plane having unevenness is formed, an effective contact area between the polycrystalline silicon and dielectrics is largely increased. When the above system is applied to a capacitor of a DRAM, the C value of the capacitor is increased, stability of stock of the upper side and reliability of reading of the upper side ate improved, and integration density of the DRAM is increased. |
