| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric transducer which improves a characteristic in a boundary between crystalline silicon and conductive paste and which has satisfactory conversion efficiency. SOLUTION: Crystalline or amorphous silicon layers 2 and 3 constituting a p-n junction or a pin junction with a substrate 1 and a light-receiving face electrode layer 4 are sequentially laminated on one main face of the substrate 1 constituted of p-type or n-type crystalline silicon. Then, amorphous silicon layers 6 and 7 whose conductivity type is the same as that of the substrate 1 or i-type, and conductive paste 8 are sequentially laminated on the other main surface (backface) of the substrate 1 so as to form the transducer S. |
