FABRICATION OF QUANTUM BOX, SEMICONDUCTOR LASER AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To fabricate a quantum box exhibiting sufficient three-dimensional quantum effect stably. SOLUTION: A rectangular bore 4 having a side W of 20nm or less is made by etching an Al0.7 Ga0.3 As barrier layer 3 formed on an AlAs lower clad layer 2 using a 5:1 mixture liquid of aqueous solution of tartaric acid (50wt.% concentration) and hydrogen peroxide water (33wt.% concentration). An undoped Alx Ga1-x As (0<=x<=0.4) quantum box layer 5 is then buried in the rectangular bore 4 and an AlAs upper clad layer 6 is grown on the entire surface thus obtaining a quantum box layer 5 buried in each rectangular bore 4.