| 摘要 |
PROBLEM TO BE SOLVED: To uniformly treat the entire wafer surface with little dust by treating the wafer in a first reactor, taking it out, inserting it in a second reactor, changing the orientation of the wafer, relative to a mean gas flowing direction between the first and second reactors and treating it similarly as before. SOLUTION: A wafer 1 is carried from a cassette chamber 2 into a reactor 3 by a wafer conveyer 5 with its orientation flat, being the most remote from the conveyer 5, a reactive gas is flowed at a specified rate from the near side of the conveyer 5 to the far side for treating the wafer 1. Then the wafer is taken out of the reactor 3 and inserted into a reactor 5 while the orientation flat is nearest the conveyer 5. Nearly the same condition is held in the reactor 4 as in the reactor 3, while the reactive gas is flowed at nearly the same rate as in the reactor 3, from the near side of the conveyer 5 to the far side. This improves the uniformity of the treatment of the wafer and prevents production of dust. |
