| 摘要 |
PROBLEM TO BE SOLVED: To reduce warp in a wafer, without sacrificing the adhesion of a semiconductor substrate to a holder material by forming a series of metal layers, including an Al alloy layer and diffusion barrier layer on a semiconductor substrate, in a direction from Si to a support plate, and covering the barrier layer with a brazing material layer. SOLUTION: A semiconductor surface 1 is covered with an Al layer 3, chmically contacted with a P-doped Si. A Cr or Ti diffusion barrier layer 4 is formed on the Al layer 3 and directly covered with a brazing material layer 5 to be an adhesion intermediating agent. The metallized Si semiconductor substrate 1 is pressed to a Cu support plate 2 to cause a metallurgical bond to be generated between the barrier layer 4, brazing material layer 5 and plate 2. This reduces the warp in the wafer, without sacrificing the adhesion of the substrate to the holder material. |
