| 摘要 |
PROBLEM TO BE SOLVED: To realize a nonreflective structure at the end face of a waveguide through a simple fabrication process. SOLUTION: An n-InP butter layer 12a, an InGaAsP waveguide layer 13, a p-InP clad layer 14a, and the like are formed on an n-InP substrate 11 to prepare an original wafer 22 and then a mesa stripe 15 is formed by etching. Subsequently, the mesa stripe 15 is embedded by a p-InP block layer 12b and an n-InP block layer 16 and a p-InP clad layer 14b and the like are grown on the upper surface thereof. When it is immersed into a hydrochloric acid based etching liquid after forming respective electrodes 19, 20, the InGaAsP is not etched and only the InP is etched. Consequently, the end face of the InGaAsP waveguide layer 13 projects from theend face of an element. |
