发明名称 BOOSTED POWER SUPPLY VOLTAGE GENERATING APPARATUS UTILIZING INTERNAL VOLTAGE FOR ARRAY CIRCUIT CONTROL
摘要 <p>PROBLEM TO BE SOLVED: To always supply stably the predetermined boosted voltage level to control consumption of an excessive current by impressing an internal power supply voltage VREFA applied to an array circuit as a voltage applied to the source end of a level sensing means in a boosted power supply voltage generating apparatus to generate the boosted power supply voltage VPP of the predetermined level. SOLUTION: In a sensing means of a boosted power supply voltage generating apparatus, a VREFA voltage to be impressed to an array circuit is applied. The NMOS transistors 54, 56 are connected in series between a PMOS transistor 50 in which a VREFA is applied to a gate terminal and a ground potential is applied to a negative terminal and the NMOS transistor 52 in which a ground potential is supplied to the negative terminal. Moreover, a common gate connection node 60 is connected to the node 58 for connecting in common the NMOS54, 56 and the transistors 62, 64 are connected in series between the VREFA terminal and the ground to output VPPOSCE from the common node 66.</p>
申请公布号 JPH1011967(A) 申请公布日期 1998.01.16
申请号 JP19960320485 申请日期 1996.11.29
申请人 SAMSUNG ELECTRON CO LTD 发明人 JO TOICHI;KIN KEITO
分类号 G11C11/413;G11C5/14;G11C8/08;G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/413
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