MANUFACTURE OF PHOTOMASK, METHOD FOR DETERMINING CORRECTION QUANTITY OF IRRADIATION OF RESIST MATERIAL WITH ELECTRON BEAM AND PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To make it possible to manufacture a photomask without deviation of the size of etched mask patterns from a desired size by determining the correction quantity of irradiation with an electron beam in accordance with the density per unit block of the mask patterns. SOLUTION: The relation between the density of the mask patterns to be formed and the fluctuation of the formed mask pattern size is first experimentally determined (sub-step SS-1A). A range where a process proximity effect extends is determined by using the data of the relation between the resulted plotting rate and size difference as a basis for correcting the process proximity effect (SS-1B). The correction quantity of the irradiation with the electron beam required for each of the respective plotting rates is experimentally determined (SS-1C). The density of the mask patterns in the respective unit blocks is determined by calculation with the range where the process proximity effect extends as a unit block (step S-2). The correction quantity of the irradiation at each of the respective unit blocks with the electron beam to be cast to a resist material is determined from the correction quantity of the irradiation and the mask patterns previously determined in accordance with the same.