FABRICATION OF ELECTRODE FOR EXTERNAL CONNECTION, AND ELECTRODE FOR EXTERNAL CONNECTION AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To inexpensively form an external connection electrode by providing a method for fabricating the external connection electrode on an active region of a semiconductor device, and providing the external connection electrode and the semiconductor device. SOLUTION: A fabrication method of an external connection electrode where an external connection electrode 11 composed of a second wiring layer 5 and an electrode formation part 6 is formed on a semiconductor device 1 having a first wiring layer 4. The method is composed of a first insulating film formation process where a first insulating film 7 is formed on the semiconductor device 1 having the first wiring layer 4 excepting a connection part 8 connected with the second wiring layer 5, a second wiring layer formation process where after at least part of a conductor film 10 connected with the first wiring layer 4 is formed on the first insulating film 7 with an electroless plating method, the conductor film 10 is patterned to hereby form the second wiring layer 5, and a second insulating film formation process where a second insulating film 13 is formed on the second wiring layer 5 excepting the electrode formation part 6.