| 摘要 |
PROBLEM TO BE SOLVED: To obtain a monolithic device which operates at a high temperature. SOLUTION: A semiconductor layer 107 having a thickness of severalÅto several hundreds ofÅ, within an SOI substrate including about 10<18> -10<20> cm<-3> impurities, is patterned so as to form a source electrode 101 and a drain electrode 103 by plasma etching or the like. Further, a thin line 104, having a width of severalÅto several hundreds ofÅand a length ofÅto several hundreds ofÅ, is formed between the source electrode 101 and the drain electrode 103. The thin line 104 has a narrow regions having a width of severalÅto several hundreds ofÅat positions 104a and 104b in its central portion, and has a region between these two regions, as an island 109. A gate electrode 102 is provided, via an insulating film 108, on the island 109. The island 109 between two narrow potential barriers is formed by applying a voltage to the gate electrode 102. |
