| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photoresist compsn. forming a resist pattern less liable to a change even when allowed to stand until heat treatment after exposure by using a combination of an N-sulfonylamido compd. having specified substituents with an acid generating agent. SOLUTION: This positive image forming compsn. contains a compd. generating an acid under the action of light or heat and at least one of N-sulfonylamido compds. represented by the formulae L1 -(SO2 -NR2 -CO-R1 )n and L1 -(CO-NR2 -SO2 - R1 )n , wherein (n) is an integer of 1-6, R1 is an arom. group of alkyl, L1 is an arom. group or alkyl in the case of n=1, L1 is a multivalent combining group consisting of nonmetallic atoms in the case of 2<=n<=6 and R2 is tert. alkyl such as t-butyl or 2,2-dimethyl-4,4-dimethylbutyl, alkoxymethyl, arylmethyl or alicyclic alkyl. |
