SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a high performance semiconductor device by specifying the energy band gap of a Si semiconductor film having a region substantially regarding as a crystal. SOLUTION: A silicon oxide film is formed as an underlying film 302 on a quartz substrate 301, an amorphous Si film of 10000Åthick is formed on the surface thereof an irradiated with a UV light and a nickel acetate soln. contg. Ni 10ppm in wt.% is dropped on the oxide film to form a Ni-containing layer 304. It is heat treated to crystallize the amorphous film 303 to obtain a crystalline Si film 305. It is thermally oxidized in an oxidative atmosphere contg. Cl 3% at 800-1000deg.C to form a thermal oxide film of 500 angstroms thick on the surface of the Si film 305. The energy gap of the Si film is 1.3-1.9eV at room temp. to realize a good normally-off characteristic with an intrinsic semiconductor layer used for a channel forming region.