| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device which can avoid gate clogging and void generation. SOLUTION: The method for fabricating a semiconductor device includes steps of disposing an assembled lead frame 5 in between lower and upper mold parts 20 and 21 of a metallic mold 22, forcingly introducing molten resin 26 into a cavity 24 from a gate 23 through a sprue 25 defined by the metallic mold, opening the metallic mold parts and removing the lead frame therefrom, and cutting and removing unnecessary portions from the lead frame. In this method, a sheet of tape 15 is applied onto at least a plurality of leads of the lead frame 5. Within the metallic mold parts, the taped leads form one face of the gate 23. After the resin is forcingly introduced in the cavity, the tape is removed so that the tape portion is bent between the leads and a recess resulting from the bent portion also forms part of the gate. |
