发明名称 METHOD FOR ANALYZING ELECTRICAL CHARACTERISTIC OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the number of repetition to enable a high speed computation by estimating values of physical quantities at specified points in an object area by the extrapolation and correcting initial values according to regions when the specified positions corresponding to any of regions such as inversion layer or accumulation layer. SOLUTION: Whether the estimation of a soln. is possible by the extrapolation at set boundary conditions is judged. If solns. exist for twice in the past extrapolations, the conditions are regarded to be met. If not, whether soln. exist once in the past is judged. If not at all,ϕij , nij , pij are obtained by assuming local charge neutrality at all points. If soln. exist once in the past, the value obtained by adding a voltage change fraction toϕij only at points connected to voltage-changed electrodes. If the estimation of the soln. by the extrapolation is possible, estimation of the solution by the extrapolation is carried out and initial values are corrected according to a judging layer, accumulating layer, depletion layer and high implanted state to obtainϕ, n, p.
申请公布号 JPH1012867(A) 申请公布日期 1998.01.16
申请号 JP19960158476 申请日期 1996.06.19
申请人 TOSHIBA CORP 发明人 WADA TETSUNORI
分类号 G01R31/26;G06F17/50;H01L21/336;H01L29/00;H01L29/78;(IPC1-7):H01L29/78 主分类号 G01R31/26
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