| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce difference in the amount of flowing chemicals, by forming holes on the side surface of an inside bath of which surface is spaced by a specific distance from the upper end portion of the inside bath, making chemicals supplied to the inside bath overflow, and making the chemicals flow into an outside bath. SOLUTION: Holes 33 are positioned higher than the upper side part of a wafer 21 which is accommodated in chemicals 15 in an inside bath 31. Viewed from the structural side surface of the inside bath 31, the interval between the upper side part of the wafer 21, accommodated in the inside bath 31 and the upper end portion of the inside bath 31, is only 2cm, so that the holes 33 are positioned in the part spaced by 2cm or less downward from the upper end portion of the inside bath 31. Preferably, the holes 33 are positioned in the part spaced by 1cm downward from the upper end portion of the inside bath 31. Thereby the etching rate difference of an insulating layer on the wafer which is caused by the arrangement position of the wafer, accommodated in the chemicals in the inside bath, is reduced, and reliability of etching process can be improved.</p> |
