| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a pack for a semiconductor device which can be produced in stable processes having high heat-radiating performance and nigh reliability. SOLUTION: A metallic substrate of a three-layer structure having a metal plate with an insulating body on the plate and a copper foil on the insulating body is used. The metal plate of the metal substrate is formed into a heat spreader also used as a GND plane 10 and a plurality of isolated land patterns 13 which are mutually insulated electrically. Also, the copper foil is formed into copper foil wiring 4 and island pattern 15. The copper foil island 4 and the island pattern 15 respectively conduct electricity to the land pattern 13 by a via hole 3 and also to the heat spreader also used as GND plane 10 by a heat-radiating via 14. If the island pattern 15 is set to a ground potential, then the heat spreader also used as GRD plane 10 will have the same ground potential. At the same time, it also plays the role of the heat spreader which efficiently releases heat generated on the rear surface of an LSI7 to the outside.</p> |
