发明名称 THIN-LAYERED MAGNETIC FIELD SENSOR
摘要 <p>This magnetic field sensor comprises a thin-layered planar element (1) of magnetoresistant crystalline material with specific resistance anisotropy in the plane, having a first and a second easy magnetisation axes (XX', YY'). This element has electrical connecting means (2, 2') enabling the flow of a first measuring current in the element along a first direction, and two electrical connections (3, 3') enabling a voltage measurement along a second direction transversal relative to the first direction. The two easy magnetisation axes are substantially equivalent. The device comprises an electrical conductor(6) arranged parallel to the first easy magnetisation axis insulated from the magnetoresistant material and allowing the flow of a control electric current inducing into the element a magnetic field which imposes, when the sensor is not in use, a magnetisation direction orientation of the element parallel to the second easy magnetisation axis.</p>
申请公布号 WO1998001764(A1) 申请公布日期 1998.01.15
申请号 FR1997001205 申请日期 1997.07.04
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