| 摘要 |
A semiconductor device comprising on a substrate a first semiconductor region of one conductive type, first source and and drain regions of the opposite conductive type formed in the above regions, a first gate electrode formed in a region separating said source and drain regions, the first gate electrode being electrically floated through an insulating film, and at least two second gate electrodes connected to said gate electrode by capacitive coupling, wherein an inverted layer is formed under said first gate electrode and said first source and drain regions are electrically connected together only when a predetermined threshold value is exceeded by an absolute value of a value obtained by linearly summing up the weighed voltages applied to the second gate electrodes. <IMAGE> |
