| 摘要 |
PROBLEM TO BE SOLVED: To greatly extend the area of a capacitor by forming dielectric films on the surfaces of a first and a second storage nodes, and forming plate electrodes on the dielectric films. SOLUTION: By using a first photosensitive film 35 as a mask, a fourth insulating film 34, first polysilicon 33, and a third, a second and a first insulating films 32, 27, 26 are eliminated in order, in such a manner that an active region 21 of a substrate 25 is exposed. Thereby a first node contact 37 is formed. The first photosensitive film 35 is eliminated, and second polysilicon 38 is formed on the whole surface of a first and a second node contacts 36, 37 and the fourth insulating film 34. Insulating material is buried in the first and the second node contacts 36, 37. Dielectric films 30 are formed on the whole surfaces of a first and a second storage nodes. Plate electrodes 31 are formed on the dielectric films 30, and a first and a second capacitors are completed. Thereby the area of a capacitor can be largely extended. |
