发明名称 MANUFACTURE OF SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the number of times of manufacturing process, and restrain increase of manufacturing cost, by exposing the upper surface of a bit line, and forming a bit contact hole reaching an N<+> type source-drain region and a node contact hole penetrating an interlayer insulating film and reaching an N<+> type source drain region. SOLUTION: A bit contact hole 123a and a node contact hole 124a penetrating interlayer insulating films 121a, 111a and reaching N<+> type source-drain regions 105, 106. The interval between the bit contact hole 123a and a word line 104 and the interval between the node contact hole 124a and the word line 104 and a bit line 116 are specified. The bit contact hole 123a exposes a part of the upper surface and a part of the side surface of the bit line 116, in the overlap part of the bit line 116. Thereby decrease of yield and increase of manufacturing cost can be restrained.
申请公布号 JPH1012845(A) 申请公布日期 1998.01.16
申请号 JP19960167381 申请日期 1996.06.27
申请人 NEC CORP 发明人 KOGA HIROTAKA
分类号 H01L21/28;H01L21/316;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 主分类号 H01L21/28
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