| 摘要 |
PROBLEM TO BE SOLVED: To obtain a small high-frequency resonator with low loss, having electrode structure where a low loss converting effect by means of the multilayer conversion of a conductor thin film is effectively applied by permit ting surfaces in the respective layers of a part or the whole part of a multilayer part to be substantially perpendicular with respect to the surface where a sepa rating part is provided in a first electrode. SOLUTION: Al2 O3 (ε=10) with 1mm thickness is used in a host substrate 1, SiO2 (ε=4.4) is in a dielectric layer 2 and Au is used in a conductive layer 3, so as to constitute a system having a resonance frequency of 1.9(GHz). Then, a multilayer electrode 4 is welded onto the base substrate 1 through the use of low-melting glass, to permit the laminated surface of the multilayer electrode 4. At the rear side of the host substrate 1, a grounded electrode 5 constituted of an Ag film with 20μm thickness being sufficiently thick with respect to the skin depth. Thus, the non-load value of the resonator with a same structure having a strip line conductive film being a single layer with thickness of 300μm is about 270. With respect to this, the non-load value of the resonator is about 310, so that further low-loss is attained. |
