| 摘要 |
PROBLEM TO BE SOLVED: To remarkably improve the heat radiating ability of a power FET by forming pads for wire bonding on the rear surface of a semiconductor chip and connecting some of the electrodes of a transistor to the pads for wire bonding through metallic plugs filling up the through holes of the semiconductor chip. SOLUTION: A transistor is formed on the surface of a semiconductor chip 1 and pads 8 for wire bonding are provided on the rear surface of the chip 1. Then the partial electrodes 4 of the transistor are connected to the pads 8 through metallic plugs 7 filling up through holes 6 formed through the chip 1 from the front surface to the rear surface of the chip 1. In addition, the other electrode 3 of the transistor is connected to a die bonding substrate 13 through a conductive material 12 for die bonding. For example, the transistor is constituted of a power FET transistor and the gate and drain electrodes 5 and 4 of the transistor are connected to the pads 8 as some of the electrodes 4 and the source electrode 3 of the transistor is connected to the substrate 13 as the other electrode.
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