发明名称 SRAM mit Flash-Rücksetzung für auswählbare E/A-Leitungen
摘要 A static random access memory having multiple I/Os includes a memory array (10) of memory cells (42) with columns that are selectively clearable as a function of the associated I/O. The columns are arranged in pairs (34) with each column in the pair (34) associated with the same I/O. A clear signal is input thereto on a line (28) and driven by a driver (30). The clear signal is only associated with the pairs (34) associated with a selected I/O. The remaining columns of memory cells associated with unselected I/Os are not cleared.
申请公布号 DE68928270(T2) 申请公布日期 1998.01.15
申请号 DE1989628270T 申请日期 1989.05.17
申请人 SGS-THOMSON MICROELECTRONICS, INC., CARROLLTON, TEX., US 发明人 MCCLURE, DAVID CHARLES, CABINET BALLOT-SCHMI, F-75116 PARIS, FR;LYSINGER, MARK A.,, TEXAS 75007, US
分类号 G11C11/41;G06F1/24;G06F12/08;G11C7/10;G11C7/12;G11C7/20;G11C11/413;(IPC1-7):G11C11/419;G11C7/00 主分类号 G11C11/41
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