| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a sputtering device capable of improving the degree of vacuum by perfectly separating a reaction chamber and a vacuum pumping part in a load lock chamber. SOLUTION: This device is provided with a vacuum luffing means 40 capable of luffing a reaction chamber 10 and a load lock chamber 20 from an atmospheric state to a low vacuum state, a primary pumping means 50 separating the reaction chamber from a means of pumping the reaction chamber to a high vacuum and separately pumping the load lock chamber to a high vacuum state, a secondary pumping means 60 executing pumping to a high vacuum state so as to prevent the leakage of the vacuum caused by the state in which the reaction chamber 10 and the load lock chamber 20 form the same space per the time of transferring a wafer, and many valves opening and closing vacuum lines communicated with the reaction chamber 10 and the load lock chamber 20 by the operations of the above means.</p> |
