发明名称 |
Method for making an all-silicon capacitive pressure sensor |
摘要 |
An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.
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申请公布号 |
US5706565(A) |
申请公布日期 |
1998.01.13 |
申请号 |
US19960707107 |
申请日期 |
1996.09.03 |
申请人 |
DELCO ELECTRONICS CORPORATION |
发明人 |
SPARKS, DOUGLAS RAY;BANEY, WILLIAM J.;STALLER, STEVEN EDWARD;CHILCOTT, DAN WESLEY;SIEKKINEN, JAMES WERSTLER |
分类号 |
G01L9/00;(IPC1-7):H01G7/00 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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