| 摘要 |
A method of deposited a film on a semiconductor workpiece in an inductively-coupled plasma sputtering chamber so as to avoid contamination of the film by material sputtered off the induction coil. This is accomplished by alternately performing two processes in the chamber: (1) a pasting process performed with no RF power applied to the induction coil, and (2) an inductively-coupled plasma sputter deposition process for depositing a desired film on a semiconductor workpiece. The pasting process deposits material from the target onto the surface of the induction coil, thereby forming a protective coating on the coil. To the extent the coating material is sputtered off the induction coil during the subsequent ionized sputtering process, it will be the same as the material being sputtered off the target, and therefore it will not contaminate the film being deposited on the semiconductor workpiece. After a certain number of semiconductor workpieces are processed with the ionized sputtering process, the protective coating on the induction coil will thin enough in spots to risk exposing the underlying material of the coil. At that point, the film deposition process is terminated, and the pasting process is repeated. After the pasting process deposits a coating on the coil, the film deposition process can resume.
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