发明名称 |
Silicide agglomeration fuse device |
摘要 |
A fusible link device disposed on a semiconductor substrate for providing discretionary electrical connections. The fusible link device of the invention includes a silicide layer and a polysilicon layer formed on the silicide layer and has a first un-programmed resistance. The silicide layer agglomerates to form an electrical discontinuity in response to a predetermined programming potential being applied across the silicide layer, such that the resistance of the fusible link device can be selectively increased to a second programmed resistance.
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申请公布号 |
US5708291(A) |
申请公布日期 |
1998.01.13 |
申请号 |
US19950537283 |
申请日期 |
1995.09.29 |
申请人 |
INTEL CORPORATION |
发明人 |
BOHR, MARK T.;ALAVI, MOHSEN |
分类号 |
H01L21/82;H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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