发明名称 |
Method of forming chemically amplified resist pattern and manufacturing for semiconductor device by using the chemically amplified resist pattern |
摘要 |
A chemically amplified resist pattern is formed by applying chemically amplified resist, forming thereafter a layer of an amorphous polyolefines substance thereon, then exposing the chemically amplified resist, and furthermore, developing the chemically amplified resist after removing the amorphous polyolefines substance.
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申请公布号 |
US5707784(A) |
申请公布日期 |
1998.01.13 |
申请号 |
US19950567210 |
申请日期 |
1995.12.05 |
申请人 |
FUJITSU LTD.;NIPPON ZEON CO., LTD. |
发明人 |
OIKAWA, AKIRA;TANAKA, HIROYUKI;OIE, MASAYUKI;TANAKA, HIDEYUKI;ABE, NOBUNORI |
分类号 |
G03F7/26;G03F7/00;G03F7/004;G03F7/039;G03F7/11;G03F7/20;G03F7/38;H01L21/027;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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