发明名称 METHOD OF SEPARATING WAFERS INTO INDIVIDUAL DIE
摘要 A method of separating a wafer into individual die is disclosed. The wafer includes a substrate with organic thin-film multiple layers. A portion of the organic multiple layers is etched along a scribe line with excimer laser to form a groove to expose a portion of the substrate before sawing the substrate along the scribe line with a saw blade. Plasma etching or ion beam etching or sand blasting is an alternative to the excimer laser.
申请公布号 CA2209884(A1) 申请公布日期 1998.01.10
申请号 CA19972209884 申请日期 1997.07.09
申请人 NEC CORPORATION;NEC CORPORATION 发明人 ISHIDA, HISASHI
分类号 H05K3/00;H01L21/301;H01L21/304;H01L21/78;H05K3/46;(IPC1-7):H01L51/40 主分类号 H05K3/00
代理机构 代理人
主权项
地址