IMPROVED POST PLASMA ASHING WAFER CLEANING FORMULATION

摘要

A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: chelating agen 2-98 %; solvent 2-98 %. In the preferred embodiment the chelating agent is selected from the group consisting of 2,4-Pentanedione, Malonic acid, Oxalic acid, p-Toluenesulfonic acid, and Trifluoroacetic acid and the solvent is selected from the group consisting of Water, Ethylene glycol, N-Methylpyrrolidone (NMP), Gamma butyrolactone (BLO), and Butyl carbitol.